介绍了 Ｃ 波段低端的 Ｇａ Ａｓ Ｆ Ｅ Ｔ 压控振荡器（ Ｖ Ｃ Ｏ）。这种振荡器采用混合参数设计技术，选用新型场效应晶体管（ Ｆ Ｅ Ｔ）反沟道电路接法。分析了电路工作原理及影响电压调制带宽的诸因素，提出并解决了一些技术难题，给出了测试结果。结果表明这种 Ｖ Ｃ Ｏ 具有较大的优越性。

This paper introduces a kind of GaAs FET voltage controlled oscillator (VCO) whose operating frequency is in low C-band. A technique of hybrid parameter and a new-type of inverse channel circuit connection are used in our design. The paper also analyzed the circuit operating principle and influence factors for voltage modulation bandwidth. Some methods for resolving technical difficult problems are presented. The measuring result is given at the end of the paper. It is shown that this kind of VCO has obvious advantages.

TN752.02 TN386

国家预研基金