利用ＦＥＴ功率晶体管的单向化理想模型。详细讨论了晶体管放大器的输出功率、功率增益及插入相位随负载特性变化的情况。结论表明，即使在最简单的单向化模型中，功率放大器的负载特性也不能仅仅由其输入、输出阻抗来决定，它还应取决于一些晶体管的本征参数如跨导等。文中给出了数值实例。

Using the unilateral model of FET transistor, influence of load reflectioncoefficient on output power. power gain and insertion phase of the transistor amplifier has beendiscussed in detail in this paper. The conclusion indicates that the load performance of the FETpower amplifier relates not only the input and output dynamic impedance but also the intrinsicparameters such as transconductance even in the very simple unilateral model of the powertransistor. Some digital examples have been also given in this paper.

TN722.75