文中介绍了一种基于锗硅BICMOS的宽带低噪声放大器的设计。此放大器工作在2.7 GHz ~3.5 GHz 的频带,采用 0.18 μm 的锗硅工艺和cascode结构来增加其反向隔离度,并且使用了射极电阻负反馈和电阻并联反馈改善其带宽和线 性度。仿真结果展示了其在通带范围内16.3 dB 的增益和小于-10 dB的端口反射。此放大器噪声系数为2.8 dB 左右, 并使用5 V电源电压。

A broadband SiGe BiCMOS low noise amplifier (LNA) is presented, which operates from 2.7 GHz to 3.5 GHz. The LNA uses the 0.18 μm SiGe fabrication and is a cascode topology to increase the reverse isolation, with the resistive emitter degeneration and resistive feedback loop to improve bandwidth and linearity. The simulation results show that the gain reaches 16.3 dB and the ports reflectance is less than -10 dB over the band, while noise figure (NF) is about 2.8 dB at a supply voltage of 5 V.

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