现代雷达的发展迫切需要电源提升功率密度和效率。基于第三代半导体碳化硅(SiC)材料的功率器件在耐压等级、高频工作、高温性能等方面有较大优势。文中详细阐述了SiC 器件的特性和各类型SiC 功率器件的发展现状,分析了SiC功率器件在雷达电源中的应用方向,并基于SiC 金属氧化物半导体场效应晶体管(MOSFET)设计了阵面电源样机,完成了高开关频率性能测试。实验结果表明:SiC MOSFET 的高频工作能降低系统损耗,并提升电源功率密度。

The requirement of power supply with high power density and high efficiency becomes more urgent for modern radar. The power devices based on the third generation semiconductor material of silicon carbide (SiC) have promising advantages on breakdown voltage, high switching frequency operation, and thermal performance. The characteristics and status of SiC devices are introduced in detail, and the application direction of SiC devices in power supply for radar system is analyzed. The experimental power supply prototype is designed based on SiC metal oxide semiconductor field effect transistor (MOSFET) and the experiments for high switching frequencies capability are conducted. The results illustrate that SiC MOSFET operating at high switching frequencies could significantly reduce system losses, and upgrade power density.

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