简述了电源调制电路在T/R组件中对抑制自激和应用在氮化镓(GaN)射频放大器中的重要作用,论述了p型金属氧化物-半导体(p-MOS)场效应晶体管和n型金属氧化物-半导体(n-MOS)场效应晶体管两种调制电路的原理,对两种电路特性进行比较,n-MOS在调制电压、电流和速度上优于p-MOS,但由于p-MOS电路简单,其在低功率应用中也被广泛使用。最后,对调制电路中出现阻尼振荡产生的原因进行分析,得到了通过调整外围参数进行优化的方法。

The importance of power modulating circuits on restraining the transmission self-oscillation in T/ R modules and GaN amplifiers are described. The principles of p-metal oxide semiconductor (p-MOS) and n-metal oxide semiconductor (n-MOS) field effect transistor modulating circuits are discussed. Two modulating circuits are compared, and the n-MOS modulating circuit is superior to that of p-MOS at modulating voltage, current and speed, but p-MOS modulating circuit is also widely used in low power application because of simple circuits. Finally the reason of damping oscillation in modulating circuits is analyzed, and the optimizing method by adjusting periphery circuits is realized.

TN957

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