设计并实现了一款高性能的宽带中功率放大器芯片,该芯片采用0. 25 μm 砷化镓赝调制掺杂异质结场效应晶体管工艺,并通过运用共源共栅电路结构,显著提升了放大器的增益水平。同时,引入负反馈技术,有效改善了增益的平坦度,极大地拓宽了放大器的工作带宽范围,使其能够覆盖从6 GHz~18 GHz 的广泛频段,满足多样化的无线通信及雷达系统需求。实测数据表明,该芯片在指定频段内实现了稳定的17±0. 3 dB 增益,输入输出回波损耗均优于-10 dB,展现出了卓越的匹配性能。在5 V 工作电压下,电流消耗仅为63 mA,且1 dB 压缩点输出功率高达15 dBm,确保了在高功率输出时的稳定性与可靠性。此外,芯片设计紧凑,面积仅为1. 94 mm×1. 08 mm,为系统集成提供了极大的便利。

A high-performance broadband medium-power amplifier chip is designed and implemented in this paper. The chip adopts the 0. 25 μm GaAs pseudomorphic high electron mobility transistor process and utilizes a cascode circuit configuration, which significantly improves the gain level of the amplifier. Additionally, the introduction of negative feedback technology effectively improves the flatness of the gain and greatly expands the operating bandwidth range of the amplifier, enabling it to cover a wide frequency range from 6 GHz to 18 GHz, meeting the diverse needs of wireless communication and radar systems. Experimental results show that the chip achieves a stable gain of 17 ± 0. 3 dB within the specified frequency band, with both input and output return losses better than -10 dB, demonstrating excellent matching performance. At a working voltage of 5 V, the current consumption is only 63 mA, and the 1 dB compression point output power is as high as 15 dBm, ensuring stability and reliability at high-power output. The compact chip design, with an area of only 1. 94 mm × 1. 08 mm, provides significant convenience for system integration.

TN722.75